收藏本站
MegaMOS TM FET
IXTH 50N20
V DSS
= 200 V
I D25
N-Channel Enhancement Mode
IXTM 50N20
= 50 A
R DS(on) = 45 m ?
Symbol
Test Conditions
Maximum Ratings
TO-247 AD (IXTH)
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M ?
200
200
V
V
V GS
V GSM
I D25
I DM
P D
T J
T JM
Continuous
Transient
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
± 20
± 30
50
200
300
-55 ... +150
150
V
V
A
A
W
° C
° C
TO-204 AE (IXTM)
D (TAB)
T stg
-55 ... +150
° C
D
G
M d
Weight
Mounting torque
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Maximum lead temperature for soldering
300
° C
1.6 mm (0.062 in.) from case for 10 s
Features
International standard packages
Low R DS (on) HDMOS TM process
Rugged polysilicon gate cell structure
Low package inductance (< 5 nH)
- easy to drive and to protect
Fast switching times
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
Applications
Switch-mode and resonant-mode
V DSS
V GS(th)
I GSS
I DSS
V GS = 0 V, I D = 250 μ A
V DS = V GS , I D = 250 μ A
V GS = ± 20 V DC , V DS = 0
V DS = 0.8 ? V DSS
V GS = 0 V
T J = 25 ° C
T J = 125 ° C
200
2
4
± 100
200
1
V
V
nA
μ A
mA
power supplies
Motor controls
Uninterruptible Power Supplies (UPS)
DC choppers
Advantages
Easy to mount with 1 screw (TO-247)
R DS(on)
V GS = 10 V, I D = 0.5 I D25
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
0.045
?
(isolated mounting screw hole)
Space savings
High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
? 2000 IXYS All rights reserved
91534F(5/97)
1-4
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
IXTH52P10P MOSFET P-CH 100V 52A TO-247
IXTH5N100A MOSFET N-CH 1000V 5A TO247AD
IXTH60N10 MOSFET N-CH 100V 60A TO-247
IXTH60N15 MOSFET N-CH 150V 60A TO-247
IXTH60N25 MOSFET N-CH 250V 60A TO-247
IXTH6N100D2 MOSFET N-CH 1000V 6A TO247
IXTH6N120 MOSFET N-CH 1200V 6A TO-247AD
IXTH6N150 MOSFET N-CH 1500V 6A TO-247
相关代理商/技术参数
IXTH50N20 制造商:IXYS Corporation 功能描述:MOSFET N TO-247
IXTH50N25T 功能描述:MOSFET Trench Gate Power MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH50N30 功能描述:MOSFET 59 Amps 300V 0.065 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH50P085 功能描述:MOSFET -50 Amps - 500 V 0.055 W Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH50P10 功能描述:MOSFET -50 Amps -100V 0.055 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH52P10P 功能描述:MOSFET -52.0 Amps -100V 0.050 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH54N30T 功能描述:MOSFET 54 Amps 300V 72 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH56N15T 功能描述:MOSFET 56 Amps 150V 36 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube